- gas etching
- газовое травление
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
gas etching
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Etching (microfabrication) — Etching tanks used to perform Piranha, Hydrofluoric acid or RCA clean on 4 inch wafer batches at LAAS technological facility in Toulouse, France Etching is used in microfabrication to chemically remove layers from the surface of a wafer during… … Wikipedia
Gas cluster ion beam — Gas Cluster Ion Beams (GCIB) is a new technology for nano scale modification of surfaces. It can smooth a wide variety of surface material types to within an angstrom of roughness without subsurface damage. It is also used to chemically alter… … Wikipedia
Etching — For other uses of etch or etching, see Etching (disambiguation), for the history of the method, see old master prints. The Soldier and his Wife. Etching by Daniel Hopfer, who is believed to have been the first to apply the technique to… … Wikipedia
Gas Electron Multiplier — The Gas Electron Multiplier (GEM) is a type of gaseous ionization detector used in nuclear and particle physics and radiation detection. All gaseous ionization detectors are able to collect the electrons released by ionizing radiation, guiding… … Wikipedia
etching gas mixture — dujinis ėsdinimo mišinys statusas T sritis radioelektronika atitikmenys: angl. etching gas mixture vok. Ätzgasmischung, f rus. смесь для газового травления, f pranc. mélange pour décapage gazeux, m … Radioelektronikos terminų žodynas
Reactive-ion etching — (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High energy ions from the plasma… … Wikipedia
Dry etching — refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes… … Wikipedia
Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… … Wikipedia
Isotropic etching — In semiconductor technology isotropic etching is non directional removal of material from a substrate via a chemical process using an etchant substance. The etchant may be a corrosive liquid or a chemically active ionized gas, known as a… … Wikipedia
Plasma etching — is a form of plasma processing used to fabricate integrated circuits. It involves a high speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be… … Wikipedia
Advanced Silicon Etching — Reaktives Ionentiefenätzen (engl. Deep Reactive Ion Etching, DRIE), eine Weiterentwicklung des reaktiven Ionenätzen (RIE), ist ein hoch anisotroper Trockenätzprozess für die Herstellung von Mikrostrukuren in Silicium mit Aspektverhältnissen (das… … Deutsch Wikipedia
